China-US team’s feat could ‘open entirely new avenues’ in semiconductors

A joint Chinese-US research team has developed a new semiconductor manufacturing method that could revolutionize the development of high-performance light-emitting and integrated devices. The team's "self-etching" technique allows for the creation of intricate structures in superthin lead halide perovskites, a promising semiconductor material, without causing damage. This is significant because conventional lithography, the current standard, struggles with these soft and unstable materials due to uncontrolled damage from sideways light. The new process enables controlled lateral microstructures, adding a new dimension to semiconductor design. This breakthrough could surpass the limitations of current lithography and open new avenues for semiconductor performance improvements.

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