Chinese scientists hit breakthrough on 2D semiconductor wafers

South China Morning PostEN 1 min read 100% complete by Zhang TongFebruary 17, 2026 at 01:00 PM

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Chinese scientists from Southeast University and Nanjing University have developed a new technique for mass-producing 2D material wafers, a potential successor to silicon in high-performance electronics. The breakthrough addresses a major obstacle to commercializing 2D materials like molybdenum disulfide (MoS₂), which offer high carrier mobility and low power consumption. The team, led by Wang Jinlan, announced the development on January 29th. This new method aims to produce these materials uniformly and at high quality over large areas. The research is significant because silicon-based technology is approaching its physical limits, making the search for alternative semiconductor materials a global priority. The advancement could pave the way for next-generation electronics in the post-Moore’s Law era.

Key Entities & Roles

Key Player Opposition Context

China ×240% Nanjing University 50% Molybdenum disulfide (MoS₂) 60% Nanjing ×270% Southeast University 80% Wang Jinlan ×290%

Keywords

2d materials 100% semiconductor wafers 90% mass production 80% semiconductor chips 70% high-performance electronics 70% silicon 60% molybdenum disulfide 60% carrier mobility 50% post-moore’s law 50%